Product Description
1. Black Silicon Carbide Introduction
Because of the rarity of natural moissanite, most silicon carbide is synthetic. It is used as an abrasive, and more recently as a semiconductor and diamond simulant of gem quality. The simplest manufacturing process is to combine silica sand and carbon in an Acheson graphite electric resistance furnace at a high temperature, between 1,600 °C (2,910 °F) and 2,500 °C (4,530 °F). Fine SiO2 particles in plant material (e.g. rice husks) can be converted to SiC by heating in the excess carbon from the organic material. The silica fume, which is a byproduct of producing silicon metal and ferrosilicon alloys, also can be converted to SiC by heating with graphite at 1,500 °C (2,730 °F).
2. Black Silicon Carbide Chemical Composition (%)
| Grit | Sic | F.C. | Fe2O3 |
| F12-F90 | ≥98.50 | <0.20 | ≤0.60 |
| F100-F150 | ≥98.00 | <0.30 | ≤0.80 |
| F180-F220 | ≥97.00 | <0.30 | ≤1.20 |
| F230-F400 | ≥96.00 | <0.40 | ≤1.20 |
| F500-F800 | ≥95.00 | <0.40 | ≤1.20 |
| F1000-F1200 | ≥93.00 | <0.50 | ≤1.20 |
| P12-P90 | ≥98.50 | <0.20 | ≤0.60 |
| P100-P150 | ≥98.00 | <0.30 | ≤0.80 |
| P180-P220 | ≥97.00 | <0.30 | ≤1.20 |
| P230-P500 | ≥96.00 | <0.40 | ≤1.20 |
| P600-P1500 | ≥95.00 | <0.40 | ≤1.20 |
| P2000-P2500 | ≥93.00 | <0.50 | ≤1.20 |
3. Black Silicon Carbide Physical Index
| Grits | Bulk Density g/cm3 | High Density g/cm3 | Grits | Bulk Density g/cm3 | High Density g/cm3 |
| F16 ~ F24 | 1.42~1.50 | ≥1.50 | F100 | 1.36~1.45 | ≥1.45 |
| F30 ~ F40 | 1.42~1.50 | ≥1.50 | F120 | 1.34~1.43 | ≥1.43 |
| F46 ~ F54 | 1.43~1.51 | ≥1.51 | F150 | 1.32~1.41 | ≥1.41 |
| F60 ~ F70 | 1.40~1.48 | ≥1.48 | F180 | 1.31~1.40 | ≥1.40 |
| F80 | 1.38~1.46 | ≥1.46 | F220 | 1.31~1.40 | ≥1.40 |
| F90 | 1.38~1.45 | ≥1.45 |
4. Black Silicon Carbide Size Available
F12-F1200, P12-P2500
0-1mm, 1-3mm, 6/10, 10/18, 200mesh, 325mesh
Other special specifications could be supplied on request.
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